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Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO
Application to LSI
Masahiro Fujita , Shunpei Yamazaki
Key features:
• Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices.
• Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention.
• Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
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